S. LEELASHYAM; G SHOBHA; L. HARI PRASAD. On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration. Journal of Science & Technology (JST), [S. l.], v. 5, n. 6, p. 175–177, 2020. DOI: 10.46243/jst.2020.v5.i06.pp175-177. Disponível em: https://jst.org.in/index.php/pub/article/view/573. Acesso em: 22 dec. 2024.