S. Leelashyam, G Shobha, and L. Hari Prasad. 2020. “On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration”. Journal of Science & Technology (JST) 5 (6):175-77. https://doi.org/10.46243/jst.2020.v5.i06.pp175-177.