S. Leelashyam, G Shobha, L. Hari Prasad. On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration. Journal of Science & Technology (JST) [Internet]. 2020 Dec. 29 [cited 2024 Dec. 22];5(6):175-7. Available from: https://jst.org.in/index.php/pub/article/view/573