On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration

Abstract

Channel electron and hole mobilities in MOSFETs have been extracted in terms of the eRective vertical field for several substrate biases. After ascertaining that the 2-D drift–diRusion numerical device simulator is reproducing the substrate charge variation in the MOSFET with respect to the gate voltage, obtained from C–V data, the mobility versus eRective field behavior is extracted by comparing the simulated and measured Id–Vgs characteristics. A simple model has been constructed to fit the extracted mobility data in weak and strong inversion, for inversion-layer electrons and holes in n-MOSFET and p-MOSFET, respectively. © 2002 Elsevier Science Ltd. All rights reserved.