Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles

Abstract

A new, comprehensive, physically-based, semi- empirical, local model for transverse-field dependent electron and hole mobility in GROUND VEHICLES transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLESI V characteristics over a wide range ofsubstrate doping, channellength, transverse electric field, substrate bias, and temperature.