Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3

Authors

  • Mr. B. Srinidhi
  • Mrs. B. Santhoshi
  • Mrs. P. Kiranmayi
  • Mrs. G. R.V.A.Sushma

Keywords:

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Abstract

     

We looked at the possibility of the defect level E1 in heat treated n-type bulk β-Ga2O3 in hydrogen

(H2) and argon (Ar) gases. The presence of hydrogen (H) doped β-Ga2O3 during H2 annealing at 900 °C has been verified via the use of Fourier transform-infrared spectroscopy. Studies using deep-level transient spectroscopy reveal that the addition of H increases the concentration of the E1 level, which contradicts the results seen in samples heat-treated in an Ar flow. Regardless of the presence or absence of a reverse-bias voltage, the E1 level does not change after heat treatments at 650 K. Possible causes of E1's flaw may be investigated using the hybrid-functional computations. We find three types of hydrogen-containing defect complexes that are consistent with E1 in terms of their charge-state transition levels. These include arrangements of singly hydrogenated Ga-O vacancies, shallow Ga-substitutional hydrogen-passivated donor impurities, and substitutional hydrogen at one of the triple coordinated O sites. The observed thermal stability of E1 is compatible with only the second kind of hydrogen binding energies.

 

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Published

2022-09-22

How to Cite

Mr. B. Srinidhi, Mrs. B. Santhoshi, Mrs. P. Kiranmayi, & Mrs. G. R.V.A.Sushma. (2022). Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3 . Journal of Science & Technology (JST), 7(12), 1–16. Retrieved from https://jst.org.in/index.php/pub/article/view/988